mic2292-15bml资料 | |
mic2292-15bml |
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file size : 116 kb
manufacturer: description:honeywells enhanced soi ricmos™ iv (radiation insen- sitive cmos) technology is radiation hardened through the use of advanced and proprietary design, layout and pro- cess hardening techniques. the ricmos™ iv process is a 5-volt, simox cmos technology with a 150 å gate oxide and a minimum drawn feature size of 0.75 µm (0.6 µm effective gate lengthleff). additional features include tungsten via plugs, honeywells proprietary sharp pla- narization process, and a lightly doped drain (ldd) struc- ture for improved short channel reliability. a 7 transistor (7t) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume simox substrate provide improved dose rate hardening. |
1pcs | 100pcs | 1k | 10k | ||
型 号:mic2292-15bml 厂 家: 封 装:0611 批 号: 数 量:2000 说 明: |
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运 费: 所在地: 新旧程度: |
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联系人:林浩/林妮 |
电 话:0755-82532799/82532766/83989559 |
手 机:13510168121/13725556003 |
qq:496982847/351622092 |
msn:linearic@hotmail.com |
传 真:0755-82532766 |
email:maxim_zi@126.com |
公司地址: 深圳市福田区佳和大厦b座1802室 门市部:华强广场 q2a114展销柜 |