tms320lbc57pge80资料 | |
tms320lbc57pge80 |
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file size : 116 kb
manufacturer: description:description power switch. connects the drain of the internal high voltage n-channel mosfet to the inductor and schottky diode to generate the led boost voltage. this voltage is determined by the total forward bias voltage of the led series string and the isense resistor value. (note: both pins must be connected.) analog ground (note: must be connected to a low noise ground source.) switch ground (note: must be connected to a high current ground source.) input supply pin. input range from 1.1 to 5.5 volts. must be bypassed with a low esr capacitor to gnd. over voltage detect input. compares the led boots voltage to the internal voltage reference. if the boost voltage rises above 22v the ovd circuit disables the oscillator and n-channel mosfet until the boost voltage falls below 18.5v. must be bypassed with a low esr capacitor to gnd. shutdown and intensity control input. a control voltage above 260mv enables device operation. a control voltage below 100mv disables device operation. led intensity is linearly adjusted with voltages between 260mv and vdd. current sense input. the led bias current is set by connecting a carbon composite or monolithic resistor from this input to ground. isense regulates this current to 1/13 of the ctrl input voltage. |
1pcs | 100pcs | 1k | 10k | ||
型 号:tms320lbc57pge80 厂 家: 封 装:0630 批 号:dip/sop 数 量:29086 说 明: |
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运 费: 所在地: 新旧程度: |
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联系人:林浩/林妮 |
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公司地址: 深圳市福田区佳和大厦b座1802室 门市部:华强广场 q2a114展销柜 |